Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization
نویسندگان
چکیده
Volatile resistive switching random access memory (RRAM) devices are drawing attention in both storage and computing applications due to their high ON-/ OFF-ratio, fast speed, low leakage, scalability. However, these relatively new the physical mechanisms still under investigation. A thorough understanding modeling of dynamics underlying filament formation self-dissolution utmost importance view future integration volatile neuromorphic systems arrays. To assess develop appropriate models, though, electrical properties device have be characterized. In this article, we present an extensive study Ag/SiO x -based RRAM devices. Important parameters, such as time, voltage, retention time investigated a function stimulation conditions. explanation is provided applicability discussed.
منابع مشابه
Nanoionics-based resistive switching memories.
Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical...
متن کاملElectrical Characterization of Resistive Switching Memories
Metal oxide based resistive switching memories, also known as resistive-RAM (RRAM), have shown promising characteristics for next-generation nonvolatile memory and reconfigurable logic applications. These devices can be electrically switched between a low-resistance-state (LRS) and high-resistance-state (HRS) over many cycles. Fig. 1(a) illustrates the resistive switching terminologies and the ...
متن کاملInvestigation of resistive switching in anodized titanium dioxide thin films
In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase nanotube lengths which itself c...
متن کاملResistive switching characteristics of MnOx-based ReRAM
The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal–insulator–metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al w...
متن کاملInvestigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
Available online 17 September 2012
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3076029